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Slow-Wave Coaxial Transmission Line Formed Using CMOS Processes

机译:使用CMOS工艺形成的慢波同轴传输线

摘要

An integrated circuit structure includes an interconnect structure over a semiconductor substrate and a coaxial transmission line. The coaxial transmission line includes a signal line, a top plate over the signal line and electrically insulated from the signal line, and a bottom plate under the signal line and electrically insulated from the signal line. At least one of the top plate and the bottom plate includes metal strip shields and dielectric strips, with each of the dielectric strips being between two of the metal strip shields. The integrated circuit structure further includes a ground conductor electrically connecting the top plate and the bottom plate. The ground conductor is insulated from the signal line by a dielectric material.
机译:集成电路结构包括在半导体衬底和同轴传输线上方的互连结构。同轴传输线包括信号线,在信号线上方且与信号线电绝缘的顶板,以及在信号线下方且与信号线电绝缘的底板。顶板和底板中的至少一个包括金属带屏蔽和电介质带,每个电介质带在两个金属带屏蔽之间。该集成电路结构还包括电连接顶板和底板的接地导体。接地导体通过介电材料与信号线绝缘。

著录项

  • 公开/公告号US2010141354A1

    专利类型

  • 公开/公告日2010-06-10

    原文格式PDF

  • 申请/专利权人 SHU-YING CHO;

    申请/专利号US20080331090

  • 发明设计人 SHU-YING CHO;

    申请日2008-12-09

  • 分类号H01P1/18;

  • 国家 US

  • 入库时间 2022-08-21 18:53:13

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