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首页> 外文期刊>Microwave and Wireless Components Letters, IEEE >High-Q Slow-Wave Coplanar Transmission Lines on 0.35 $mu$m CMOS Process
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High-Q Slow-Wave Coplanar Transmission Lines on 0.35 $mu$m CMOS Process

机译:0.35 $ mu $ m CMOS工艺上的高Q慢波共面传输线

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摘要

In this letter, experimental results and trends for shielded coplanar waveguide transmission lines (S-CPW) implemented in a 0.35 $mu$m CMOS technology are provided. Because of the introduction of floating strips below the CPW transmission line, high effective dielectric permittivity and quality factor are obtained. Three different geometries of S-CPW transmission lines are characterized. For the best geometry, the measured effective dielectric permittivity reaches 48, leading to a very high slow-wave factor and high miniaturization. In addition, measurements demonstrate a quality factor ranging from 20 to 40 between 10 and 40 GHz, demonstrating state-of-the-art results for transmission lines realized in a low-cost CMOS standard technology.
机译:在这封信中,以0.35 $ mu $ 实现的屏蔽共面波导传输线(S-CPW)的实验结果和趋势提供了CMOS技术。由于在CPW传输线下方引入了浮动条,因此获得了很高的有效介电常数和品质因数。表征了S-CPW传输线的三种不同的几何形状。为了获得最佳几何形状,测得的有效介电常数达到48,从而导致非常高的慢波因数和高度小型化。此外,测量结果表明,质量因子在10至40 GHz之间介于20至40之间,这表明以低成本CMOS标准技术实现的传输线的最新技术成果。

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