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Process charging and electrostatic damage protection in silicon-on-insulator technology
Process charging and electrostatic damage protection in silicon-on-insulator technology
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机译:绝缘体上硅技术中的过程充电和静电损坏保护
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摘要
A SOI device features a conductive pathway between active SOI devices and a bulk SOI substrate. The conductive pathway provides the ability to sink plasma-induced process charges into a bulk substrate in the event of process charging, such as interlayer dielectric deposition in a plasma environment, plasma etch deposition, or other fabrication provides. A method is also disclosed which includes dissipating electrostatic and process charges from a top of a SOI device to the bottom of the device. The top and bottom of the SOI device may characterize a region of active devices and a semiconductor method respectively. The method further includes a single masking step to create seed regions for an epitaxial-silicon pathway.
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