Method for fabricating dielectric on metal by baking dielectric precursor under reduced pressure atmosphere

摘要

A dielectric film production process comprising a baking step in which a dielectric film is formed by heating a precursor layer formed on a metal layer, wherein the metal layer contains at least one type of metal selected from the group consisting of Cu, Ni, Al, stainless steel and austenitic nickel-chromium-based superalloy and during at least part of the baking step the precursor layer is heated in a reduced pressure atmosphere.