首页> 外国专利> Multiple Quantum-Well Structure, Radiation-Emitting Semiconductor Base and Radiation-Emitting Component

Multiple Quantum-Well Structure, Radiation-Emitting Semiconductor Base and Radiation-Emitting Component

机译：多重量子阱结构，辐射发射半导体基体和辐射发射组件

页面导航

摘要
著录项
相似文献

摘要

A multiple quantum well structure (1) which comprises at least a first quantum well structure (2a) for generating radiation of a first wavelength (6) and at least a second quantum well structure (2b) for generating radiation of a second wavelength (7), which is greater than the first wavelength (6), and is provided for emission of radiation of a main wavelength (14), wherein the second wavelength (7) differs from the first wavelength (6) in such a way that the main wavelength (14) changes only by a predetermined maximum value in the event of a shift in the first wavelength (6) and the second wavelength (7). A radiation-emitting semiconductor body and a radiation-emitting component are furthermore described.

机译：一种多量子阱结构（ 1 ），至少包括一个第一量子阱结构（ 2 a ），用于产生第一波长（ 6 ）和至少一个第二量子阱结构（ 2 b ），用于产生第二波长（ 7 ）的辐射>），其大于第一波长（ 6 ），并用于发射主波长（ 14 ）的辐射，其中第二波长（ 7 ）与第一波长（ 6 ）的不同之处在于，在发生以下情况时，主波长（ 14 ）仅改变预定的最大值第一波长（ 6 ）和第二波长（ 7 ）的偏移量。此外，描述了发射辐射的半导体本体和发射辐射的组件。 展开▼

著录项

公开/公告号US2010025652A1

专利类型

公开/公告日2010-02-04

原文格式PDF

申请/专利权人 PETER STAUSS;
展开▼

申请/专利号US20070303249

发明设计人 PETER STAUSS;
展开▼

申请日2007-05-04

分类号H01L29/66;

国家 US

入库时间 2022-08-21 18:51:30

相似文献

专利

外文文献

中文文献

1. 多量子阱结构、发射辐射的半导体本体和发射辐射的器件 [P] . 中国专利： CN101461069A . 2009-06-17

2. 发射辐射的半导体本体、用于制造发射辐射的半导体本体的方法和发射辐射的半导体器件 [P] . 中国专利： CN102934244B . 2015.11.25

3. MULTIPLE QUANTUM-WELL STRUCTURE, RADIATION-EMITTING SEMICONDUCTOR BASE AND RADIATION-EMITTING COMPONENT [P] . 韩国专利： KR20090018688A . 2009-02-20

机译：多量子阱结构，辐射辐射半导体基体和辐射辐射组件

4. MULTIPLE QUANTUM-WELL STRUCTURE, RADIATION-EMITTING SEMICONDUCTOR BASE AND RADIATION-EMITTING COMPONENT [P] . 欧洲知识产权局专利： EP2027607A1 . 2009-02-25

机译：多量子阱结构，辐射辐射半导体基体和辐射辐射组件

5. MULTIPLE QUANTUM-WELL STRUCTURE, RADIATION-EMITTING SEMICONDUCTOR BASE AND RADIATION-EMITTING COMPONENT [P] . 世界知识产权组织专利： WO2007140738A1 . 2007-12-13

机译：多量子阱结构，辐射辐射半导体基体和辐射辐射组件

1. Topology optimization of plate structures using plate element-based moving morphable component (MMC) approach [J] . Tianchen Cui, Zhi Sun, Chang Liu, 力学学报：英文版 . 2020,第002期

2. Modal identification of multi-degree-of-freedom structures based on intrinsic chirp component decomposition method [J] . Sha WEI, Shiqian CHEN, Zhike PENG, 应用数学和力学（英文版） . 2019,第012期

3. Sensor fault diagnosis of nonlinear processes based on structured kernel principal component analysis [J] . Kechang FU, Liankui DAI, Tiejun WU, 控制理论与应用（英文版） . 2009,第003期

4. Photoluminescence studies from micropillars fabricated on IV-VI multiple quantum-well semiconductor structure [J] . S. Mukherjee, S. Jain, F. Zhao, Microelectronics journal . 2007,第12期

5. High-power semiconductor 0.89-1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures [J] . P. V. Bulaev, A. A. Marmalyuk, A. A. Padalitsa, Quantum electronics . 2002,第3期

6. Optical modal gain in multiple quantum-well semiconductor lasers based on InP [J] . Wartak M S., Weetman P, Alajoki T, Canadian Journal of Physics . 2006,第1期

7. The novel THz generation and detection possibilities of resonant-tunneling based semiconductor multiple-quantum well nanostructures [C] . A. L. Karuzskii, V. V. Kapaev, V. N. Murzin, International conference on micro- and nano-electronics . 2013

8. Slow and fast light using quantum-dot and quantum-well semiconductor optical amplifiers. [D] . Kondratko, Piotr Konrad. 2007

9. Palliative treatment with radiation-emitting metallic stents in unresectable Bismuth type III or IV hilar cholangiocarcinoma [O] . Jian Lu, Jin-He Guo, Hai-Dong Zhu, 2017

10. Semiconductor qubits based on fluorine implanted ZnMgSe/ZnSe quantum-well nanostructures [O] . Kim, Y., Sleiter, D., Sanaka, K., 2012

11. Optical Characterization of Antimony-Based, Types-I and -II, Multiple Quantum-Well Semiconductor Structures for Mid-Infrared Laser Applications. [R] . Ferguson, E. G. 2003

1. QUALITY CONTROL OF SEMICONDUCTOR PACKAGING BASED ON PRINCIPAL COMPONENTS ANALYSIS [J] . . 中国机械工程学报 . 2007,第006期

2. Seismic Response of Base-Isolated Structures underMulti-component Ground Motion Excitation [J] . Jiang Yicheng Tang Jiaxiang School of Civil Engineering Huazhong University of Science and Technology Wuhan 430074 . 中国地质大学学报：英文版 . 2001,第1期

3. 半导体II-类量子阱中法诺态的结构和自发辐射对无粒子数反转光增益过程的作用 [C] . 郭长志 . 中国物理学会半导体微腔物理及其应用学术研讨会 . 1997

4. 同步辐射光电发射方法研究ZnO基稀磁半导体带隙杂化电子态及其磁性关联 [A] . 陈铁锌 . 2012