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Run-to-run control of backside pressure for CMP radial uniformity optimization based on center-to-edge model
Run-to-run control of backside pressure for CMP radial uniformity optimization based on center-to-edge model
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机译:基于中心到边缘模型的CMP径向均匀性优化的背面压力的运行控制
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摘要
During planarization of wafers, the thickness of a layer of a wafer is measured at a number of locations, after the wafer has been planarized by chemical mechanical polishing. The thickness measurements are used to automatically determine, from a center to edge profile model to which the measurements are fit, a parameter that controls chemical mechanical polishing, called “backside pressure.” Backside pressure is determined in some embodiments by a logic test based on the center-to-edge profile model, coefficient of determination R-square of the model, and current value of backside pressure. Note that a “backside pressure” set point is adjusted only if the fit of the measurements to the model is good, e.g. as indicated by R-square being greater than a predetermined limit. Next, the backside pressure that has been determined from the model is used in planarizing a subsequent wafer.
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