Empirical-based modeling for control of CMP removal uniformity

摘要

A method for optimizing parameters to control CMP removal rate uniformity has been developed and tested. The design-of experiment method was used to determine empirically the sensitivity of removal rate at various wafer radii using linear belt CMP tool parameters. The recipe was determined to achieve the most uniform final profile for a given incoming film thickness profile. The model was verified on oxide and copper CMP processes, demonstrating reductions in set-up time.