Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods

摘要

A memory device as described herein includes a memory member contacting first and second interface structures. The first interface structure electrically and thermally couples the memory member to access circuitry and has a first thermal impedance therebetween. The second interface structure electrically and thermally couples the memory member to a bit line structure and has a second thermal impedance therebetween. The first and second thermal impedances are essentially equal such that applying a reset pulse results in a phase transition of an active region of the memory member spaced away from both the first and second interface structures.