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Memory devices with error detection using read/write comparisons
Memory devices with error detection using read/write comparisons
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机译:使用读/写比较进行错误检测的存储设备
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摘要
A memory device includes a main memory cell array and a redundant memory cell array configured to store a first parity code for data stored in the main memory cell array. The device further includes a parity generator configured to generate a second parity code responsive to reading of the stored data from the main memory cell array, and a comparator configured to compare the first and second parity codes. In some embodiments, the parity generator configured to generate the second parity code during a copyback operation.
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