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Method and apparatus for performing hydrogen optical emission endpoint detection for photoresist strip and residue removal

机译:进行氢光发射终点检测以去除光刻胶和去除残留物的方法和装置

摘要

Methods for monitoring and detecting optical emissions while performing photoresist stripping and removal of residues from a substrate or a film stack on a substrate are provided herein. In one embodiment, a method is provided that includes positioning a substrate comprising a photoresist layer into a processing chamber; processing the photoresist layer using a multiple step plasma process; and monitoring the plasma for a hydrogen optical emission during the multiple step plasma process; wherein the multiple step plasma process includes removing a bulk of the photoresist layer using a bulk removal step; and switching to an overetch step in response to the monitored hydrogen optical emission.
机译:本文提供了在执行光致抗蚀剂剥离以及从基板或基板上的膜堆叠去除残留物的同时监视和检测光发射的方法。在一个实施例中,提供了一种方法,该方法包括将包括光致抗蚀剂层的基板放置在处理室中;以及将光致抗蚀剂层放置在处理室中。使用多步骤等离子体工艺处理光致抗蚀剂层;在多步等离子体工艺期间,监测等离子体的氢光发射;其中,多步骤等离子体工艺包括使用整体去除步骤去除大部分的光致抗蚀剂层;并响应于所监测的氢光发射而切换至过蚀刻步骤。

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