OXIDE MATERIAL, PATTERNING SUBSTRATE, METHOD OF FORMING A PATTERN, METHOD OF PRODUCING AN IMPRINT TRANSFER MOLD, METHOD OF PRODUCING A RECORDING MEDIUM, IMPRINT TRANSFER MOLD, AND RECORDING MEDIUM

摘要

An oxide material (102) is used as masking for patterning by etching which is performed with respect to a substrate or a material laminated on the substrate (101). The oxide material is also used in a multi-step etching which is performed by using a resist (103) formed on the oxide material as a mask. The etching rate of the oxide material for a reaction gas containing an inert gas or hydrogen is higher than the etching rate of the resist for the reaction gas containing an inert gas or hydrogen, while the etching rate of the oxide material for a fluorine-containing gas is lower than the etching rate of the material, which is to be patterned by using the oxide material as a mask, for the fluorine-containing gas. In addition, the oxide material is soluble in a weak acid.