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Doped Gd5Ge2Si2 compounds and methods for reducing hysteresis losses in Gd5Ge2Si2 compound

机译:掺杂的Gd 5 Ge 2 Si 2 化合物和减少Gd 5 Ge 2的磁滞损耗的方法 Si 2 化合物

摘要

A Gd5Ge2Si2 refrigerant compound is doped or alloyed with an effective amount of silicide-forming metal element such that the magnetic hysteresis losses in the doped Gd5Ge2Si2 compound are substantially reduced in comparison to the hysteresis losses of the undoped Gd5Ge2Si2 compound. The hysteresis losses can be nearly eliminated by doping the Gd5Ge2Si2 compound with iron, cobalt, manganese, copper, or gallium. The effective refrigeration capacities of the doped Gd5Ge2Si2 compound are significantly higher than for the undoped Gd5Ge2Si2 compound.
机译:将Gd 5 Ge 2 Si 2 制冷剂化合物掺入或与有效量的形成硅化物的金属元素合金化,从而使磁滞损失与未掺杂的Gd 5 的磁滞损耗相比,掺杂的Gd 5 Ge 2 Si 2 化合物的含量大大降低。 Sub> Ge 2 Si 2 化合物。通过用铁,钴,锰,铜或镓掺杂Gd 5 Ge 2 Si 2 化合物,几乎可以消除磁滞损耗。掺杂的Gd 5 Ge 2 Si 2 化合物的有效制冷能力明显高于未掺杂的Gd 5 > Ge 2 Si 2 化合物。

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