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Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse
Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse
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机译:包括电阻率转换氧化物或氮化物以及反熔丝的非易失性可重写存储单元
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摘要
A memory cell is described, the memory cell comprising a dielectric rupture antifuse and a layer of a resistivity-switching material arranged electrically in series, wherein the resistivity-switching material is a metal oxide or nitride compound, the compound including exactly one metal. The dielectric rupture antifuse is ruptured in a preconditioning step, forming a rupture region through the antifuse. The rupture region provides a narrow conductive path, serving to limit current to the resistivity-switching material, and improving control when the resistivity-switching layer is switched between higher- and lower-resistivity states.
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