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Nanometer-scale lithography using extreme ultraviolet/soft x-ray laser interferometry
Nanometer-scale lithography using extreme ultraviolet/soft x-ray laser interferometry
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机译:使用极紫外/软X射线激光干涉仪的纳米级光刻
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摘要
Direct patterning of nanometer scale features by interferometric lithography using a 46.9 nm laser is described. Multiple exposures using a Lloyd's mirror interferometer permitted printing of arrays having 60 nm FWHM features.
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