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Methods of forming contact structures for memory cells using both anisotropic and isotropic etching
Methods of forming contact structures for memory cells using both anisotropic and isotropic etching
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机译:使用各向异性和各向同性蚀刻形成用于存储单元的接触结构的方法
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摘要
Methods of forming a cell of a NOR-type flash memory device are provided in which a first gate pattern having a first sidewall and a second gate pattern having a second sidewall that opposes the first sidewall are formed on a semiconductor substrate. A source/drain region is formed in the semiconductor substrate between the first and second gate patterns. An etch stop layer is formed on the first and second sidewalls that defines a gap region. A dielectric layer is formed in the gap region, and is then etched to form a contact hole. Finally, a conductive material is deposited in the contact hole.
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