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BiCMOS devices with a self-aligned emitter and methods of fabricating such BiCMOS devices
BiCMOS devices with a self-aligned emitter and methods of fabricating such BiCMOS devices
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机译:具有自对准发射极的BiCMOS器件及其制造方法
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摘要
A method of fabricating an heterojunction bipolar transistor (HBT) structure in a bipolar complementary metal-oxide-semiconductor (BiCMOS) process selectively thickens an oxide layer overlying a base region in areas that are not covered by a temporary emitter and spacers such that the temporary emitter can be removed and the base-emitter junction can be exposed without also completely removing the oxide overlying the areas of the base region that are not covered by the temporary emitter or spacers. As a result, a photomask is not required to remove the temporary emitter and to expose the base-emitter junction.
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