首页> 外国专利> Detector arrangement, method for the detection of electrical charge carriers and use of an ONO field effect transistor for detection of an electrical charge

Detector arrangement, method for the detection of electrical charge carriers and use of an ONO field effect transistor for detection of an electrical charge

机译:检测器装置,用于检测电荷载流子的方法以及ONO场效应晶体管用于检测电荷的用途

摘要

The invention relates to a detector arrangement (100), a method for the detection of electrical charge carriers and use of an ONO field effect transistor for detection of an electrical charge. The detector arrangement (100) has an ONO field effect transistor embodied on and/or in a substrate (101), for the detection of electrical charge carriers, such that the electrical charge carrier (103) for detection may be introduced into die ONO field effect transistor layer sequence (102), a recording unit (104), coupled to the ONO field effect transistor, for recording an electrical signal characteristic of the amount and/or the charge carrier type for the electrical charge carrier (103) introduced into the ONO layer sequence (102) and an analytical unit for determining the amount and/or the charge carrier type of the electrical charge carrier (103) introduced into the ONO layer sequence (102) from the characteristic electrical signal.
机译:本发明涉及检测器装置( 100 ),用于检测电荷载流子的方法以及ONO场效应晶体管用于检测电荷的用途。探测器装置( 100 )在基板( 101 )上和/或之中具有ONO场效应晶体管,用于检测电荷载流子,从而检测电可以将用于检测的电荷载流子( 103 )引入耦合到ONO场效应晶体管的ONO场效应晶体管层序列( 102 ),记录单元(104) ,用于记录引入ONO层序列( 102 )中的电荷载体( 103 )的数量和/或电荷载体类型的电信号特性,以及分析单元,用于根据特征电信号确定引入ONO层序列( 102 )的电荷载体( 103 )的数量和/或电荷载体类型。

著录项

  • 公开/公告号US7709836B2

    专利类型

  • 公开/公告日2010-05-04

    原文格式PDF

  • 申请/专利权人 BERNHARD KNOTT;GEORG TEMPEL;

    申请/专利号US20050507787

  • 发明设计人 BERNHARD KNOTT;GEORG TEMPEL;

    申请日2003-03-12

  • 分类号H01L23/58;H01L21/66;

  • 国家 US

  • 入库时间 2022-08-21 18:48:17

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