首页>
外国专利>
Methods for forming dual fully silicided gates over fins of FinFet devices
Methods for forming dual fully silicided gates over fins of FinFet devices
展开▼
机译:在FinFet器件的鳍片上形成双完全硅化栅极的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Methods for forming fully silicided gates over fins of FinFet devices are disclosed. The disclosure provides methods for patterning a gate stack over each fin from a polysilicon layer and a polysilicon germanium layer, and then removing the polysilicon germanium layer over one of the fins. The disclosure further includes forming a metal layer over both fins and annealing the FinFet device to form fully silicided gates over each fin of the FinFet device.
展开▼