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Deposition of crystalline layers on polymer substrates using nanoparticles and laser nanoforming

机译:使用纳米粒子和激光纳米成型在聚合物基材上沉积结晶层

摘要

A method of forming crystalline semiconducting layers on low melting or low softening point substrates includes the steps of providing an aqueous solution medium including a plurality of semiconductor nanoparticles dispersed therein having a median size less than 10 nm, and applying the solution medium to at least one region of a substrate to be coated. The substrate has a melting or softening point of 200° C. The solution medium is evaporated and the at least one region is laser irradiated for fusing the nanoparticles followed by annealing to obtain a continuous film having a recrystallized microstructure. An article includes a polycrystalline semiconducting layer including a plurality of crystallites predominately in the size range of 2 to 50 μm, and a substrate having a melting or softening point of 200° C. supporting the semiconducting layer. An average grain size of the crystallites is less at an interface proximate to the semiconducting layer as compared to an average grain size further away from the interface.
机译:一种在低熔点或低软化点基板上形成晶体半导体层的方法,包括以下步骤:提供水溶液介质,该溶液介质包括分散在其中的中值尺寸小于10 nm的多个半导体纳米颗粒,并将该溶液介质施加到至少一个待涂覆基材的区域。基材具有<200℃的熔点或软化点。蒸发溶液介质,并激光照射至少一个区域以熔融纳米颗粒,然后退火以获得具有重结晶的微结构的连续膜。一种制品,包括:多晶半导体层,其包含主要在2至50μm的尺寸范围内的多个微晶;以及支撑该半导体层的熔点或软化点<200℃的基板。与更远离界面的平均晶粒尺寸相比,在接近半导体层的界面处的微晶的平均晶粒尺寸较小。

著录项

  • 公开/公告号US7691731B2

    专利类型

  • 公开/公告日2010-04-06

    原文格式PDF

  • 申请/专利权人 SACHIN M. BET;ARAVINDA KAR;

    申请/专利号US20070686572

  • 发明设计人 SACHIN M. BET;ARAVINDA KAR;

    申请日2007-03-15

  • 分类号H01L21/20;H01L21/36;

  • 国家 US

  • 入库时间 2022-08-21 18:48:15

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