Microlenses of CMOS image sensor and method for fabricating the same

摘要

A method of fabricating microlenses in a CMOS image sensor including at least one of the following steps: Forming a color filter array including a plurality of color filters on a semiconductor substrater. Forming on and/or over the color filter array a flattening layer to compensate for height differences between color filters. Forming a silicon oxide layer on and/or over the flattening layer. Forming on and/or over the silicon oxide layer, a plurality of photoresist patterns which correspond to the color filters, wherein the photoresist patterns may be separated from each other. Forming a plurality of CxFy-based polymer bumps surrounding the plurality of photoresist patterns using at least one process gas (e.g. C₅F₈, CH₂F₂, Ar, and/or O₂). Etching the plurality of polymer bumps, the plurality of photoresist patterns, and the silicon oxide layer using an etching recipe having substantially the same etching selection ratio between the plurality of polymer bumps, the plurality of photoresist patterns, and the silicon oxide layer.