PROCESS FOR PERIODICAL STRUCTURING OF THIN SOL-GEL OXIDE LAYERS BY PROCESSING WITH COHERENT LASER BEAM IN PULSED MODE CONDITIONS

摘要

The invention relates to a process for periodical coherent structuring of a thin oxide layer resulting from the treatment of dense and amorphous sol-gel layer during the densification phase. According to the invention, the process consists in depositing a sol-gel oxide film such as HfOin dense and amorphous state with the thickness of 10...200 mm on a swivel plate such as silicon wafer substrate, afterwards the layer is perpendicularly irradiated on its surface with a laser-beam radiation with the fluence of 10m J/ square centimeter, such as a Nd-Yag laser, the resulting film being continuously undulated, coherent, adhering to the substrate with a thickness in the range of 10% of the laser wave length.