Process for removing material in the structuring of a thin layer semiconductor component used for photovoltaic cells comprises directing laser beam having selected pulse duration and wavelength on the layer side of the component

摘要

Process for removing material in the structuring of a thin layer semiconductor component comprises directing a laser beam having a selected pulse duration and wavelength on the layer side of the component in a gas atmosphere under reduced pressure or in an inert gas. The pulse duration, wavelength and energy density distribution of the laser beam are adjusted, so that the material of the substrate lying next to the material to be removed experiences no function-impairing damage. An independent claim is also included for a thin layer semiconductor material produced by the above method.