PLASMA CVD DEVICE, DLC FILM, AND METHOD FOR DEPOSITING THIN FILM

摘要

Provided is a plasma CVD device wherein the voltage VDC, i.e., the DC component generated at the electrode during high-frequency discharge in CVD deposition, can be increased.  A plasma CVD device is characterized in that it comprises a chamber (1), a holding electrode (2) disposed in the chamber and adapted for holding a substrate on which a film is to be deposited, a high frequency power supply (8) connected electrically with the holding electrode, a counter electrode (12) arranged opposite to the substrate held by the holding electrode and connected with an earth electrode or a float electrode, a raw material gas supply mechanism for supplying a raw material gas into the space (13) between the counter electrode and the holding electrode, and an exhaust mechanism for exhausting the chamber, and that the following expression is satisfied. b/a≥2 where a is the surface area of the holding electrode, and b is the surface area of the counter electrode.