Passivation method of non-radiative recombination centres of ZnO samples and passivated ZnO samples prepared by the same method.

摘要

The method involves depositing magnesium on a surface of Zinc oxide specimen (1), and annealing the specimen on which magnesium is deposited in an oxidizing atmosphere at a temperature of preferably 500 to 1200 degree Celsius and better still 600 to 1200 degree Celsius for a period of preferably 30 minutes to 10 hours, and better still 1 hour to 10 hours, where the specimen is in the form of a solid substrate, nanowire with core of Zinc oxide or shell of Zinc magnesium oxide or magneisum oxide structure, or two dimensional epitaxial layer.