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OPTICALLY PUMPED SOLID-STATE LASER AND LIGHTING SYSTEM COMPRISING SAID SOLID-STATE LASER

机译:光学泵浦固态激光器和包括固态激光器的照明系统

摘要

The invention relates to a solid-state laser device (1) comprising a gain medium (10) essentially having a main phase of a solid state host material (15) which is doped with rare-earth ions. According to the invention at least a portion of the rare-earth ions are Ce3+-ions (19) with at least one 4f-state (16, 17) and at least one 5d-band (18) energetically located between the highest valence state and the lowest conduction state of the host material (15), wherein : the highest 4f-state (17) and the bottom edge of the 5d-band (18) have a first energy- level difference (Δ1), and - the lowest 4f-state (16) and the upper edge of the 5d-band (18) have a second energy-level difference (Δ2); and wherein the host material (15) is selected such that the resulting gain medium (10) has an energy range (20) devoid of unoccupied states for disabling excited state absorption, the energy range (20) being located between : a lower energy (21) which is by the value of the first energy level difference (Δ1) above the bottom edge of the 5d-band (18) and - a higher energy (22) which is by the value of the second energy level difference possible host materials are Y3 Alga4 O12, Ca3Sc2Si3O12.(Δ2) above the upper edge of the 5d-band (18). The invention further relates to a corresponding lighting system comprising at least one solid-state laser device (1).
机译:本发明涉及一种固态激光装置(1),其包括基本上具有掺杂有稀土离子的固态基质材料(15)的主相的增益介质(10)。根据本发明,稀土离子的至少一部分是Ce 3+离子(19),其具有至少一个能量地位于最高价态之间的至少一个4f态(16、17)和至少一个5d能带(18)。以及主体材料(15)的最低传导状态,其中:最高4f态(17)和5d波段(18)的底边具有第一能级差(Δ1),以及- 4f状态(16)和5d带(18)的上边缘具有第二能级差(Δ2);且其中选择主体材料(15)使得所得的增益介质(10)的能量范围(20)没有用于激发态吸收的未占据状态,该能量范围(20)位于以下能量之间: 21)是由5d波段(18)底部边缘上方的第一能级差(Δ1)的值决定的,以及-由第二能级差值可能的主体材料的较高的能量(22)是5d波段(18)上边缘上方的Y3 Alga4 O12,Ca3Sc2Si3O12。(Δ2)。本发明还涉及一种包括至少一个固态激光器装置(1)的相应的照明系统。

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