the highest 4f-state (17) and the bottom edge of the 5d-band (18) have a first energy-level distance (Δ1) andthe lowest 4f-state (16) and the upper edge of the 5d-band (18) have a second energy-level distance (Δ2),wherein the host material (15) is selected such that the resulting gain medium (10) has an energy range (20) devoid of unoccupied states for disabling excited state absorption, the energy range (20) is located betweena lower energy (21) which is by the value of the first energy level distance (Δ1) above the bottom edge of the 5d-band (18) anda higher energy (22) which is by the value of the second energy level distance (Δ2) above the upper edge of the 5d-band (18).;The invention further relates to a corresponding lighting system comprising at least one solid-state laser device (1)."/> OPTICALLY PUMPED SOLID-STATE LASER AND LIGHTING SYSTEM COMPRISING SAID SOLID-STATE LASER
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OPTICALLY PUMPED SOLID-STATE LASER AND LIGHTING SYSTEM COMPRISING SAID SOLID-STATE LASER

机译:光学泵浦固态激光器和包括固态激光器的照明系统

摘要

The invention relates to a solid-state laser device (1) comprising a gain medium (10) essentially having a main phase of a solid state host material (15) which is doped with rare-earth ions. According to the invention at least a portion of the rare-earth ions are Ce3+-ions (19) with at least one 4f-state (16, 17) and at least one 5d-band (18) energetically between the highest valence state and the lowest conduction state of the host material (15), whereinthe highest 4f-state (17) and the bottom edge of the 5d-band (18) have a first energy-level distance (Δ1) andthe lowest 4f-state (16) and the upper edge of the 5d-band (18) have a second energy-level distance (Δ2),wherein the host material (15) is selected such that the resulting gain medium (10) has an energy range (20) devoid of unoccupied states for disabling excited state absorption, the energy range (20) is located betweena lower energy (21) which is by the value of the first energy level distance (Δ1) above the bottom edge of the 5d-band (18) anda higher energy (22) which is by the value of the second energy level distance (Δ2) above the upper edge of the 5d-band (18).;The invention further relates to a corresponding lighting system comprising at least one solid-state laser device (1).
机译:本发明涉及一种固态激光装置( 1 ),其包括基本上具有固态基质材料( 15)的主相的增益介质( 10 )。 ),其中掺有稀土离子。根据本发明,稀土离子的至少一部分是具有至少一个4f态( 16,Ce 3 + )的离子( 19 ), 17 )和至少一个5d波段( 18 )在主体材料的最高价态和最低导电态( 15 )之间发生能量作用,其中 最高的4f态( 17 )和5d波段的底部边缘( 18 )具有第一能级距离(Δ< B> 1 )和 最低的4f状态( 16 )和5d的上边缘带( 18 )具有第二能级距离(Δ 2 ), 其中选择主体材料( 15 ),以使所得的增益介质( 10 )的能量范围( 20 )没有空闲状态为了禁用激发态吸收,能量范围( 20 )位于 较低的能量( 21 < / B>),该值是5d波段( 18 )和底部边缘上方的第一能级距离(Δ 1 )的值较高的能量( 22 ),该值是高于能量的上边缘上方第二个能量水平距离(Δ 2 )的值5d带( 18 )。 ;本发明还涉及相应的照明系统,该照明系统包括至少一个固态激光装置。 ( 1 )。

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