METHOD OF SELECTING AND PROCESSING OBSERVATION DEFECTS, METHOD OF OBSERVING DEFECTS, DEVICE FOR SELECTING AND PROCESSING OBSERVATION DEFECTS, AND DEVICE FOR OBSERVING DEFECTS

摘要

Provided is technology which is related to the inspection of semiconductors, and which can efficiently detect systematic defects. In this system, systematic defects are accurately detected via the identification of defects associated with circuit forms in which defects occur with a high frequency by means of processes (S7, S8) for matching hot spots (HS) that can be simulated in advance and defects discovered as a result of a visual inspection, and processes (S6, S9) for classifying unmatched defective points into groups on the basis of the similarity of the circuit forms for the defective points. Furthermore, systematic defects occurring due to the topography of the wafer can be detected by means of a process (S11) for identifying deviations in the distribution of defects on the wafer.