PHASE-CHANGE MEMORY DEVICE AND A METHOD OF FORMING THE SAME, CAPABLE OF FORMING AN AMORPHOUS PHASE CHANGE MATERIAL LAYER

摘要

PURPOSE: A phase-change memory device and a method of forming the same are provided to improve the reliability of a phase change memory device by forming a phase change material pattern without a void uniformly.;CONSTITUTION: In a phase-change memory device and a method of forming the same, a bottom electrode(45) is formed on a substrate(10). A phase change material pattern(55) is formed on the bottom electrode, and an upper electrode(65) is included in the phase change material pattern. The phase change material pattern contains Sb, and the content of Sb is over 50% in it. The phase change material pattern is amorphous. An insulating layer(20) includes a contact hole, exposing the bottom electrode, on the top of the substrate.;COPYRIGHT KIPO 2010