DOUBLE EXPOSURE PATTERNING WITH A CARBONACEOUS HARD-MASK, CAPABLE OF REDUCING A PITCH WITHOUT HIGH COSTS

摘要

PURPOSE: A double exposure patterning with a carbonaceous hard-mask is provided to form a pattern of high fidelity with lowest price by etching a double pattern on a substrate having a half pitch.;CONSTITUTION: In a device, a carbonic mask layer is formed on a board layer(210). An arbitrary intermediate layer and a photoresist layer are attached on the carbonic mask layer(215). A reticle is arranged with the substrate layer(225). A pair of first photoresist lines is formed by exposing photoresist to the outside(230). An alignment offset is inputted within a lithographic apparatus(235). At least one of photoresist lines is divided by exposing photoresist(240). The exposed photoresist is developed(245). The carbonic mask layer and the other intermediate layer are patterned(250). A double pattern has a pitch and CD which are decreased by etching the board(255).;COPYRIGHT KIPO 2010