PLASMA PROCESS DEVICE AND A PLASMA PROCESS METHOD, CAPABLE OF INCREASING PRODUCTIVITY AND PRECISION AT THE SAME TIME

摘要

PURPOSE: A plasma process device and a plasma process method are provided to control a temperature of a base material with high heat transmission to the temperature of the metal like titan by previously controlling the temperature of a refrigerant.;CONSTITUTION: A plasma process device processes the sample mounted on an upper surface of a sample stage(103a) using the plasma in a process chamber. A path(203) is arranged inside the sample stage. A refrigerant is applied to the sample stage through the path. A heater with a film shape is arranged inside the film of the dielectric comprising the upper surface of the sample stage. A plurality of temperature controllers(105a,105b) control the temperature of the refrigerant circulated through the path to the other temperature. The controller changes the circulation of the refrigerant supplied from the temperature controller.;COPYRIGHT KIPO 2010