首页> 外国专利> TECHNIQUES FOR IMPROVING THE PERFORMANCE AND EXTENDING THE LIFETIME OF AN ION SOURCE WITH GAS MIXING

TECHNIQUES FOR IMPROVING THE PERFORMANCE AND EXTENDING THE LIFETIME OF AN ION SOURCE WITH GAS MIXING

机译:气体混合提高离子源性能和延长使用寿命的技术

摘要

Techniques improving the performance and extending the lifetime of an ion source (202a) with gas mixing are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for improving performance and extending lifetime of an ion source in an ion implanter. The method may comprise introducing a predetermined amount of dopant gas into an ion source chamber (202). The dopant gas may comprise a dopant species. The method may also comprise introducing a predetermined amount of diluent gas into the ion source chamber. The diluent gas may dilute the dopant gas to improve the performance and extend the lifetime of the ion source. The diluent gas may further comprise a co-species that is the same as the dopant species.;COPYRIGHT KIPO & WIPO 2010
机译:公开了通过气体混合来提高离子源(202a)的性能并延长其寿命的技术。在一个特定的示例性实施例中,该技术可以实现为一种用于改善离子注入机中的离子源的性能并延长其寿命的方法。该方法可以包括将预定量的掺杂剂气体引入离子源室(202)。掺杂剂气体可以包括掺杂剂物质。该方法还可包括将预定量的稀释气体引入离子源室。稀释气体可以稀释掺杂剂气体以改善性能并延长离子源的寿命。稀释气体还可以包含与掺杂剂种类相同的副物种。; COPYRIGHT KIPO和WIPO 2010

著录项

  • 公开/公告号KR20100015890A

    专利类型

  • 公开/公告日2010-02-12

    原文格式PDF

  • 申请/专利权人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES INC.;

    申请/专利号KR20097022297

  • 发明设计人 GUPTA ATUL;

    申请日2008-03-18

  • 分类号H01L21/265;H01J37/30;

  • 国家 KR

  • 入库时间 2022-08-21 18:33:20

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