METHOD FOR MANUFACTURING THE IMAGE SENSOR OF A SEMICONDUCTOR DEVICE, FOR IMPROVING THE SENSITIVITY OF A CMOS IMAGE SENSOR

摘要

PURPOSE: A method for manufacturing the image sensor of a semiconductor device is provided to simplify the manufacturing process of a CMOS(Complementary Metal Oxide Silicon) image sensor by reducing the number of layers to a photodiode through which light passes.;CONSTITUTION: A metal pad(202) is formed on the logical circuit area of a semiconductor substrate(2). An element protection layer is deposited on the front side of the area on which the metal pad formed. An open area exposing a part of the surface of the metal pad is formed by etching the element protection layer. A color filter is formed in the photosensitive element area of the semiconductor substrate. The color filter is formed into semispherical micro lenses(218a,218b,218c) through a reflow process.;COPYRIGHT KIPO 2010