COMPOSITION FOR SPUTTERING TARGET OF OXIDE SEMICONDUCTOR THIN LAYER, METHOD FOR MAKING SPUTTERING TARGET AND SPUTTERING TARGET

摘要

PURPOSE: A composition for a sputtering target of an oxide semiconductor thin film, a method for manufacturing the sputtering target, and the sputtering target are provided to obtain a transparent oxide semiconductor film showing high mobility through a low-temperature process less than 300C. CONSTITUTION: A method for manufacturing a sputtering target comprises the following steps: blending(S11) and crashing raw material powder consisting of aluminum oxide, zinc oxide, and tin oxide; molding(S12) the powder in a desired form; fist calcinating a molding product at 500 - 1000C; pulverizing and mixing the molding product which is fist calcinated; and molding the mixed powder; sintering(S13) the molding product. Indium oxide is more included in the raw material powder.