SEMICONDUCTOR DEVICE WITH A RECESS GATE AND A MANUFACTURING METHOD THEREOF, CAPABLE OF OBTAINING A LEAKAGE CURRENT PROPERTY AND A CURRENT DRIVING PROPERTY

摘要

PURPOSE: A semiconductor device with a recess gate and a manufacturing method thereof are provided to suppress the deterioration of a leakage current property due to short channel effect by increasing the length of a channel through a first recess pattern and to improve a current driving property through a second recess pattern.;CONSTITUTION: A semiconductor device includes a substrate(101), a first insulation layer(103), a gate(111), a first recess pattern(106), and a second recess pattern(107). An active region is defined on the substrate by a device isolation layer. The first insulation layer is interposed between the device isolation layer and the active region. The gate crosses the device isolation layer, the first insulation layer, and the active region. The first recess pattern is formed on the active region under the gate. The second recess pattern is formed on the first insulation layer under the gate and is lower than the first recess pattern.;COPYRIGHT KIPO 2010