首页> 外国专利> BAND GAP REFERENCE VOLTAGE GENERATOR, CAPABLE OF BEING MINIATURIZED AND SUPPLYING A REFERENCE VOLTAGE UNDER 1V

BAND GAP REFERENCE VOLTAGE GENERATOR, CAPABLE OF BEING MINIATURIZED AND SUPPLYING A REFERENCE VOLTAGE UNDER 1V

机译:带隙基准电压产生器,能够小型化并提供1V以下的基准电压

摘要

PURPOSE: A band gap reference voltage generator is provided to supply a reference voltage under 1V regardless of temperature variation while reducing the number of resistor which requires large area.;CONSTITUTION: A band gap reference voltage generator includes a third and fourth resistance(R3-R4), a first and second bipolar transistor, and fourth and fifth NMOS transistor(M4-M5). The PMOS transistor has a gate and a source which are connected to a first node and a power terminal in common and has a drain connected to 2-4 nodes respectively. A feedback amplifier has inverting and non-inverting terminal which are connected to the second and third node respectively. The first and second bipolar transistor has emitters which are connected to a fifth node and the third node and has collector and base which are connected to the ground.;COPYRIGHT KIPO 2010
机译:用途:带隙基准电压发生器可提供1V以下的基准电压,而不管温度变化如何,同时减少了需要大面积的电阻器的数量。;构成:带隙基准电压发生器包括第三和第四电阻(R3- R4),第一和第二双极晶体管以及第四和第五NMOS晶体管(M4-M5)。 PMOS晶体管的栅极和源极共同连接到第一节点和电源端子,并且其漏极分别连接到2-4个节点。反馈放大器具有分别连接到第二和第三节点的反相和同相端子。第一和第二双极型晶体管的发射极连接到第五节点和第三节点,集电极和基极连接到地。COPYRIGHTKIPO 2010

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号