TRANSISTOR, AN INVERTER INCLUDING THE SAME AND A METHOD FOR MANUFACTURING THE TRANSISTOR AND THE INVERTER, INCLUDING A GATE INSULATION LAYER IN WHICH A CHARGE IS TRAPPED

摘要

PURPOSE: A transistor, an inverter including the same and a method for manufacturing the transistor and the inverter are provided to obtain an enhancement/depletion inverter with superior operational property using an oxide thin film transistor of which threshold voltage is increased.;CONSTITUTION: Gate electrodes(G1, G2) and channel layers(C1, C2) are spaced apart. Gate insulation layers(GI1, GI2) are arranged between the gate electrodes and the channel layers and include a charge trapping region. Source electrodes(S1, S2) and drain electrodes(D1, D2) are connected to both side of the channel layers. An electrical charge is trapped in the charge trapping region. A threshold voltage is transferred to a positive direction.;COPYRIGHT KIPO 2010