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Transistor, inverter including the same and methods of manufacturing transistor and inverter

机译:晶体管,包括其的逆变器以及制造晶体管和逆变器的方法

摘要

A transistor, an inverter including the transistor, and methods of manufacturing the inverter and the transistor. A gate insulating layer of the transistor has a charge trap region. A threshold voltage may be moved in a positive (+) direction by trapping charges in the charge trap region. The transistor may be an enhancement mode oxide thin-film transistor (TFT) and may be used as an element of the inverter.
机译:晶体管,包括该晶体管的反相器以及制造该反相器和晶体管的方法。晶体管的栅极绝缘层具有电荷陷阱区域。通过将电荷俘获在电荷俘获区域中,阈值电压可以沿正(+)方向移动。该晶体管可以是增强模式氧化物薄膜晶体管(TFT),并且可以用作反相器的元件。

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