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TUNABLE SEMICONDUCTOR LASER WITH EXTERNAL CAVITY

机译:具有外腔的可调谐半导体激光器

摘要

PURPOSE: In a wavelength tunable semiconductor laser using the outside resonator is the laser diode chip, the outside type laser is manufactured in the narrow range by minimizing distance to the wavelength tunable filter. CONSTITUTION: A slope mirror(500) is installed in one side of the laser diode chip(100). In the slope mirror is one side section of the laser diode chip, the horizontally emitted laser light is incident made in the wavelength tunable filter(410). A lens(210) collimating the light radiated in the laser diode chip is installed in the wavelength tunable semiconductor laser. The slope mirror is arranged in the optical path between the lens and the laser diode chip. The incline of the slope mirror is formed by evaporating the metallic foil or the dielectric thin film in the ceramic material of the glass or the silicon.
机译:目的:在使用外部谐振器的波长可调半导体激光器是激光二极管芯片的情况下,通过使到波长可调滤光片的距离最小化,可以在窄范围内制造外部型激光器。组成:倾斜镜(500)安装在激光二极管芯片(100)的一侧。在倾斜镜中是激光二极管芯片的一侧部分,水平发射的激光入射到波长可调滤光器中(410)。准直在激光二极管芯片中辐射的光的透镜(210)被安装在波长可调半导体激光器中。倾斜镜布置在透镜和激光二极管芯片之间的光路上。倾斜镜的倾斜是通过蒸发玻璃或硅的陶瓷材料中的金属箔或电介质薄膜而形成的。

著录项

  • 公开/公告号KR20100035194A

    专利类型

  • 公开/公告日2010-04-05

    原文格式PDF

  • 申请/专利权人 KIM JEONG SOO;

    申请/专利号KR20080094397

  • 发明设计人 KIM JEONG SOO;

    申请日2008-09-26

  • 分类号H01S3/10;H01S5/10;

  • 国家 KR

  • 入库时间 2022-08-21 18:33:02

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