Single-angled-facet laser diode for widely tunable external cavity semiconductor lasers with high spectral purity

摘要

External cavity semiconductor lasers are demonstrated using a single-angled-facet semiconductor laser diode that does not require anti-reflection coating. A wide tuning bandwidth (7%, /spl lambda/=980 nm), large side-mode suppression ratio (50 dB, /spl lambda/=1590 nm), narrow linewidth (50 kHz), and high output power (13.5 mW) are achieved with conventional external cavity configurations.