VERTICAL TYPE SEMICONDUCTOR DEVICE AND A METHOD FOR FORMING THE SAME, CAPABLE OF REDUCING THE STEP VARIATION BETWEEN A CELL REGION AND A PERIPHERAL CIRCUIT REGION DURING A PLANARIZATION PROCESS

摘要

PURPOSE: A vertical type semiconductor device and a method for forming the same are provided to improve the resistance of the device to moisture and contamination by including a moisture proof structure in a dummy word line structure.;CONSTITUTION: A semiconductor substrate(100) includes a cell region(A) and a peripheral circuit region(B). A word line structure(170) vertically stacks a plurality of word lines in the cell region. A semiconductor structure(192) is arranged by passing through the word line structure. A gate insulation layer is arranged between the word line structure and the semiconductor structure. The height of a dummy word line structure(170d) is identical to the height of the word line structure. A moisture proof structure(220) passes through the dummy word line structure.;COPYRIGHT KIPO 2010