MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE, CAPABLE OF SIMULTANEOUSLY FORMING THE SOURCE/DRAIN REGION OF A CELL REGION AND A PERIPHERAL CIRCUIT REGION WITH A PROPER INTERVAL

摘要

PURPOSE: A manufacturing method of a semiconductor device is provided to improve a device property by implementing a very shallow junction area because an ion injection barrier does not exist during a first ion injection process.;CONSTITUTION: A gate structure of a transistor is formed on a semiconductor substrate(101) equipped with a cell region and a peripheral circuit region. A offset spacer(123) of a first substance is formed on a gate structure. A first ion injection is executed by using the gate structure and an offset spacer as an ion injection mask. A dual spacer is formed by using a material layer(142) of a second substance which has mutual etching selectivity for a semiconductor substrate and a gate structure front surface and a material layer of a third material. A second ion injection process is executed in the peripheral circuit region by using the dual spacer.;COPYRIGHT KIPO 2010