首页> 外国专利> HEATER AND AN APPARATUS FOR MANUFACTURING A SILICON MONO-CRYSTALLINE INCLUDING THE SAME, CAPABLE OF IMPROVING THE TEMPERATURE GRADIENT OF A SOLID-LIQUID INTERFACE

HEATER AND AN APPARATUS FOR MANUFACTURING A SILICON MONO-CRYSTALLINE INCLUDING THE SAME, CAPABLE OF IMPROVING THE TEMPERATURE GRADIENT OF A SOLID-LIQUID INTERFACE

机译:用于制造包括单晶硅的单晶硅晶体的加热器和装置,能够提高固液界面的温度梯度

摘要

PURPOSE: A heater and an apparatus for manufacturing a silicon mono-crystalline including the same are provided to improve the growth rate of a mono-crystalline ingot by including a high temperature heater unit and a low temperature heater unit.;CONSTITUTION: The heater in an apparatus for manufacturing a mono-crystalline manufactures the mono-crystalline using a czochralski method including a cylindrical shape of a heater unit(300). The heater unit includes a first slit(310) and a second slit(320). The first slit and the second slit are alternately arranged to form a zig-zag shape. The first slit expands from the lower side of the heater to the upper side of the heater. The second slit expands from the upper side of the heater to the lower side of the heater. The heater unit includes a low temperature heater unit(200) and a high temperature heater unit(100).;COPYRIGHT KIPO 2010
机译:目的:提供一种加热器和一种制造单晶硅的设备,通过包括一个高温加热器单元和一个低温加热器单元来提高单晶锭的生长速率。用于制造单晶的设备使用包括加热器单元(300)的圆柱形状的czochralski方法制造单晶。加热器单元包括第一狭缝(310)和第二狭缝(320)。第一狭缝和第二狭缝交替布置以形成Z字形。第一狭缝从加热器的下侧扩展到加热器的上侧。第二狭缝从加热器的上侧扩展到加热器的下侧。加热器单元包括低温加热器单元(200)和高温加热器单元(100)。; COPYRIGHT KIPO 2010

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