METHOD FOR GROWING A MONO-CRYSTALLINE INGOT AND THE MONO-CRYSTALLINE INGOT, CAPABLE OF REDUCING FAILURE RATE DUE TO NON-UNIFORM OXYGEN CONCENTRATION IN A SILICON WAFER

摘要

PURPOSE: A method for growing a mono-crystalline ingot and the mono-crystalline ingot are provided to uniformly form the concentration of oxygen which is introduced to the mono-crystalline ingot by mixing a melt in a crucible by generating temperature variation in the crucible.;CONSTITUTION: A magnetic field is applied to a melt in a crucible(10). The magnetic field is horizontal magnetic field. The temperature variation is generated with respect to a part adjacent to the crucible and the center part of the crucible in order to mix the melt. A mono-crystalline ingot is grown from the melt. A heater(30) applies heat to the melt.;COPYRIGHT KIPO 2010