MAGNETIC TUNNEL JUNCTION STRUCTURE WITH A DOUBLE MAGNETIC ANISOTROPIC FREE LAYER, CAPABLE OF DECREASING A CRITICAL CURRENT VALUE NECESSARY FOR A SWITCHING PROCESS AND INCREASING A REGENERATION SIGNAL VALUE

摘要

PURPOSE: A magnetic tunnel junction structure with a double magnetic anisotropic free layer are provided to improve reliability of a memory and thermal stability using a material whose element property is not deteriorated in a thermal process.;CONSTITUTION: A first magnetic layer has a fixed magnetization direction. A second magnetic layer(30) has a reversible magnetization direction. A nonmagnetic layer is formed between the first magnetic layer and the second magnetic layer. The magnetization direction of the second magnetic layer is inclined to the plane of the second magnetic layer by magnetically combining a third magnetic layer(40) with the second magnetic layer. The vertical magnetic anisotropic energy is larger than the horizontal anisotropic energy. A crystallization structure separation layer(50) separates the crystal orientation between the second and third magnetic layers.;COPYRIGHT KIPO 2010