LOW TEMPERATURE PROCESSABLE AND PHOTO-CROSSLINKABLE ORGANIC GATE INSULATOR, AND AN ORGANIC THIN FILM TRANSISTOR DEVICE USING THEREOF

摘要

PURPOSE: An organic gate insulator and an organic thin film transistor device using thereof are provided to form an organic insulating layer using a polyimide polymer, and to reduce a leakage current of the insulator through a photo-curing.;CONSTITUTION: An organic gate insulator for an organic thin film transistor device contains a polyimide polymer. The producing method of the polyimide polymer comprises a step of reacting polyimide including a hydroxy group with acryloyl-based halide. The organic thin film transistor device comprises a gate electrode, an organic insulating film, an organic semiconductor layer, a source electrode and a drain electrode on a glass or a plastic substrate. The organic insulating film is formed by spraying a coating solution including the polyimide polymer to the substrate including the gate electrode, and photo-curing.;COPYRIGHT KIPO 2010