Solution processable low-voltage organic thin film transistors with high-k relaxor ferroelectric polymer as gate insulator

摘要

A relaxor ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene- chlorofloroethylene) exhibits a high relative dielectric constant (k) (60). The high-k polymer is used successfully in solution processable low-voltage OTFTs as the gate insulator for the first time. Both n-channel and p-channel OTFTs based on conjugated polymers are fabricated and show carrier mobilities higher than 0.1 cm 2 V -1 s -1 at an operating voltage of 3 V.