首页> 外国专利> ABRASION LEVELING METHOD OF A NON-VOLATILE MEMORY DEVICE FOR EFFECTIVE ABRASION LEVELING BETWEEN A SINGLE LEVEL MEMORY CELL BLOCK AND A MULTI-LEVEL MEMORY CELL BLOCK

ABRASION LEVELING METHOD OF A NON-VOLATILE MEMORY DEVICE FOR EFFECTIVE ABRASION LEVELING BETWEEN A SINGLE LEVEL MEMORY CELL BLOCK AND A MULTI-LEVEL MEMORY CELL BLOCK

机译:用于单级存储单元块与多级存储单元块之间有效磨耗的非易失性存储设备的磨耗级别方法

摘要

PURPOSE: An abrasion leveling method of a non-volatile memory device for effective abrasion leveling between a single level memory cell block and a multi-level memory cell block is provided to implement an abrasion leveling between a single level memory cell block and a multi level memory cell block by changing the block consistency of logic block address.;CONSTITUTION: An average erasing frequency is calculated by obtaining respective erasing frequencies of a memory cell blocks of a non-volatile memory device(41). A program erasing frequency of the single level memory cell block is calculated(42). A converted program erasing frequency of the multi-level memory cell block is calculated(43).;COPYRIGHT KIPO 2010
机译:目的:提供一种用于在单级存储单元块和多级存储单元块之间进行有效磨损均衡的非易失性存储装置的磨损均衡方法,以实现在单级存储单元块和多级之间的磨损均衡。组成:通过擦除非易失性存储设备(41)的存储单元块的各自擦除频率来计算平均擦除频率。计算单级存储单元块的程序擦除频率(42)。计算了多级存储单元块的转换后的程序擦除频率(43)。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20100050260A

    专利类型

  • 公开/公告日2010-05-13

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20080109467

  • 发明设计人 LEE YANG SUP;

    申请日2008-11-05

  • 分类号G11C16/34;G11C16/10;G11C16/16;

  • 国家 KR

  • 入库时间 2022-08-21 18:32:47

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