Wear leveling method of Non-volatile memory device having single level memory cell block and multi level memory cell block

摘要

a This invention is a single-level memory cell block and a multi-level nonvolatile memory device comprising a memory cell block method is disclosed for the wear leveling. Wear-leveling method, comprising the steps of obtaining the all memory cell blocks, each of the erase counts of the non-volatile memory device calculates the average erase count, calculating a program / erase count of a single-level memory cell block, in terms of the multi-level memory cell block The program / calculating the number of times of erasing, and programming of single level memory cell block / erase count and the multi-level memory cells in terms of the program of the block / the sum of the erase counts edaga If the value obtained by subtracting the average erase count is set threshold value or more wear and performing a leveling operation. ; wear-leveling method, single-level memory cell block, a multi-level memory cell block, the program / erase count threshold