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METHODS OF FORMING THIN METAL-CONTAINING FILMS BY CVD OR ALD USING IRON, RUTHENIUM OR OSMIUM CYCLOPENTADIENE CARBON MONOXIDE COMPLEXES
METHODS OF FORMING THIN METAL-CONTAINING FILMS BY CVD OR ALD USING IRON, RUTHENIUM OR OSMIUM CYCLOPENTADIENE CARBON MONOXIDE COMPLEXES
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机译:利用铁,钌或OS环戊二烯一氧化碳复合物通过CVD或ALD形成含金属薄膜的方法
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摘要
Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C1o-alkyl; X is C1-C10-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.;COPYRIGHT KIPO & WIPO 2010
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