PHASE CHANGE MEMORY DEVICE CAPABLE OF READING OUT DATA WITHOUT THE DEGRADATION OF PERFORMANCE IN SPITE OF THE GENERATION OF A BOUNDARY-CROSSING

摘要

PURPOSE: A phase change memory device is provided to read out data by activating word lines of a first phase and a second phase change memory cell arrays when a boundary-crossing is occurred during a burst mode.;CONSTITUTION: A first and a second phase change memory cell arrays(211,212) comprise a plurality of phase-change memory cells. A first sense amplifier(261) amplifies data which is read out from the first phase change memory cell array. A second sense amplifier(262) amplifies data which is read out from the second phase change memory cell array. A X-decoder(230) selects one among word lines of the first and the second phase change memory cell arrays. A first Y-decoder(241) and a second Y-decoder(242) select column of the first phase change memory cell array and the second phase change memory cell array. A write driver(270) controls a writing operation of the first phase change memory cell array and the second phase change memory cell array.;COPYRIGHT KIPO 2010